It is reported that GT Advanced Technologies (NASDAQ: GTAT) and Soitec (NYSE Euronext: SOI) announced a development and licensing contract under which GT will develop, manufacture and commercialize large-capacity multi-wafers. HVPE system.
The HVPE system will be used to produce high quality GaN epitaxial films for substrates used in LED or other high growth industries such as power electronics. Compared with traditional organometallic chemical vapor deposition (MOCVD) processes, HVPE systems may result in higher growth rates and improved material properties, which are expected to significantly reduce process costs while improving device performance. The first installment of the patent technology license fee specified in the agreement has begun to be paid, but the specific terms have not been disclosed.
Soitec Phoenix Labs, a subsidiary of Soitec, has exclusive HVPE patented technology, including a new and advanced source delivery system that is expected to reduce the cost of precursors delivered to HVPE reactors. GT will use the above HVPE patented technology to develop, manufacture and commercialize HVPE systems. This HVPE system enables large-scale production of GaN template sapphire substrates. The HVPE system is expected to be available in the second half of 2014.
The HVPE system will be used to produce high quality GaN epitaxial films for substrates used in LED or other high growth industries such as power electronics. Compared with traditional organometallic chemical vapor deposition (MOCVD) processes, HVPE systems may result in higher growth rates and improved material properties, which are expected to significantly reduce process costs while improving device performance. The first installment of the patent technology license fee specified in the agreement has begun to be paid, but the specific terms have not been disclosed.
Soitec Phoenix Labs, a subsidiary of Soitec, has exclusive HVPE patented technology, including a new and advanced source delivery system that is expected to reduce the cost of precursors delivered to HVPE reactors. GT will use the above HVPE patented technology to develop, manufacture and commercialize HVPE systems. This HVPE system enables large-scale production of GaN template sapphire substrates. The HVPE system is expected to be available in the second half of 2014.
Modular UPS,Hot-Swappable Modularity,Pure Sinusoidal,Parallel Redundant UPS
Shenzhen Unitronic Power System Co., Ltd , https://www.unitronicpower.com